Ellipsometric and ion backscattering measurements of the properties of silicon-on-insulator structure formed by thermally activated redistribution of high-dose ion implanted nitrogen

The formation of silicon-on-insulator (SOI) multilayers by implantation of Si monocrystals with reactive 14N+ ions at 200 or 400 keV and following thermal annealing at 1300 0C is reported. An alternative ellipsometric method for investigation of SOI structure consisting of a buried layer of silicon nitride is applied determining refractive indices and the thickness of layers. Results are compared with other methods, especially with Rutherford backscattering spectroscopy and show a good agreement. It can be concluded that multiple-angle-of-incidence ellipsometry with a simple five-phase optical model is suitable for a non-destructive, rapid checking of SOI structures formed by ion beam synthesis