Published February 1976 | Version v1
Journal article Metadata-only

The effect of electron irradiation on Cds-PbTe and Cds-Te thin film diodes

Creators

  • 1. Bucharest Univ. (Romania)

Description

Some heterojunction structures based on CdS, Te and p-type PbTe thin films were obtained by vacuum evaporation. The effect of 3 MeV electron irradiation in these heterojunctions was studied. It was found that electrical characteristics of CdS-PbTe and CdS-Te thin film diodes strongly depend on electron-irradiation doses and preparation conditions of samples. (author)

Additional details

Identifiers

DOI
10.1080/00207217608920553;

Publishing Information

Journal Title
International Journal of Electronics
Journal Volume
40
Journal Issue
2
Series
Int. J. Electron.
Journal Page Range
147-151
ISSN
0020-7217

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
7246338
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CADMIUM SULFIDES; DOSE-RESPONSE RELATIONSHIPS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; JUNCTION DIODES; LEAD TELLURIDES; MEV RANGE 01-10; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; TELLURIUM
Descriptors DEC
BEAMS; CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; ENERGY RANGE; INORGANIC PHOSPHORS; LEAD COMPOUNDS; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; PHOSPHORS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SULFIDES; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Notes
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