Model of c-axis resistivity of high-Tc cuprates

We propose a simple model which accounts for the major features and systematics of experiments on the c=axis resistivity, ρc for La2-xSrxCuO4, YBa2Cu3O6+x, and Bi2Sr2CaCu2O8. We argue that the c-axis resistivity can be separated into contributions from in-plane dephasing and the c-axis open-quote open-quote barrier close-quote close-quote scattering processes, with the low-temperature semiconductorlike behavior of ρc arising from the suppression of the in-plane density of states measured by in-plane magnetic Knight shift experiments. We report on predictions for ρc in impurity-doped YBa2Cu3O6+x materials. copyright 1996 The American Physical Society