Published August 1975
| Version v1
Report
Investigation of the recovery of boron-implanted n-Si between room temperature and 12000C by means of electric measurements
Creators
- 1. Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Untersuchung des Ausheilverhaltens von borimplantiertem n-Si zwischen Raumtemperatur und 1200
Publishing Information
- Imprint Title
- Annual report 1975
- Imprint Pagination
- p. 104-105.
- Report number
- ZfK--295
INIS
- Country of Publication
- German Democratic Republic
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 7266488
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; BORON IONS; CARRIER DENSITY; HALL EFFECT; ION IMPLANTATION; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; HEAT TREATMENTS; IONS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only. Imprint:Gemeinsamer Jahresbericht 1975.