Published December 2005 | Version v1
Journal article

Fabrication and characterization of Zn-doped CdTe nanowires

  • 1. Chinese Academy of Science, Nano-organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, P.O. Box 5100, Beijing (China)
  • 2. City University of Hong Kong, Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, Hong Kong, SAR (China)

Description

At 850 C, Zn-doped CdTe nanowires with an average diameter of about 40 nm and lengths up to several tens of micrometers were fabricated by a CVD approach. The nanowires were detected by SEM, XRD, TEM, HRTEM, EDS, SAED, and XPS, where the as-synthesized CdZnTe nanowires have high-quality crystalline structure and grow along the left angle 001 right angle direction and the Cd/Zn ratios of these nanowires are close to those expected from the starting compositions. The corresponding growth mechanism of the nanowires is also explained. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-005-3334-x

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
81
Journal Issue
8
Series
Special issue on ''metal nanowires''
Journal Page Range
p. 1647-1650
ISSN
0947-8396
CODEN
APAMFC