Published 1986
| Version v1
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Using a 10-keV x-ray source for hardness assurance
Description
It is shown that a 10 keV x-ray source can be used to predict the responses of microelectronic circuits to Co-60 irradiation. Guidelines for using an x-ray tester in a hardness assurance program for VLSI CMOS circuits are suggested. 5 refs., 2 figs., 1 tbl
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01; 1 as DE86006492.
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The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- SAND--86-0291C
Conference
- Title
- 23. annual conference on nuclear and space radiation effects.
- Dates
- 20-23 Jul 1986.
- Place
- Providence, RI (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17089976
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COBALT 60; KEV RANGE 01-10; MICROELECTRONIC CIRCUITS; PHYSICAL RADIATION EFFECTS; QUALITY ASSURANCE; RADIATION HARDENING; X RADIATION
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ENERGY RANGE; HARDENING; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; KEV RANGE; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- Portions of this document are illegible in microfiche products.
- Secondary number(s)
- CONF-860706--4.