Published 1985
| Version v1
Report
Open
The suppresion of residual defects in silicon implanted with arsenic by rapid isothermal annealing
- 1. Rio Grande do Sul Univ., Porto Alegre (Brazil). Inst. de Fisica
Description
no abstract available
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17052905.pdf
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Additional details
Publishing Information
- Imprint Title
- Progress report 1983-1984-Instituto de Fisica-Universidade Federal do Rio Grande do Sul
- Imprint Pagination
- 175 p.
- Journal Page Range
- p. 14-15.
- Report number
- INIS-BR--506
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 17052905
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ARSENIC IONS; BACKSCATTERING; HELIUM 4 BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; RUTHERFORD SCATTERING; SILICON
- Descriptors DEC
- ATOMIC IONS; BEAMS; CHARGED PARTICLES; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; ION BEAMS; IONS; KEV RANGE; SCATTERING; SEMIMETALS
Optional Information
- Notes
- Published in summary form only.