Electron retention in InAs-nanocrystals embedded in SiO2/Si for non-volatile memories

In this paper we present the electrical characterization of an InAs nanocrystal based metal-oxide-semiconductor structure. The fabricated device behaves as a memory since the charges injected in the InAs through the SiO2 tunnel layer (holes or electrons) have a long retention time in or by the nanocrystals. A discharging model based on direct tunnelling through a dielectric barrier has been used in order to calculate electron discharging kinetics. The results show that InAs-nanocrystals are of real interest for electron storage in non-volatile memories with an improvement of data retention for electron. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)