Possibilities of high resolution electron microscopy for studying real crystal structure

Possibilities of high resolution electron microscopy for studying real crystal structure are manifested. Potentialities of dark-field and bright-field images are considered. Use of bright-field image permits to detect point defect clusters (vacancies, interstitial atoms) in crystals consisting of atoms with high atomic number. Crystal structure of U-W oxide was observed using electron microscopy. A conclusion is drawn that application of high resolution dark-field microscopy permits to observe interstitial and vacancy clusters made up of several atoms. Images of gold clusters in silicon and of interstitial cluster resulting from P diffusion in silicon are presented