Published 2002
| Version v1
Miscellaneous
Nitrogen as annihilation centre for point defects in implanted silicon
- 1. Belarussian State University, Department of Semiconductor Physics, Minsk (Belarus)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. 36
Conference
- Title
- 4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Dates
- 10-13 Jun 2002
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34075105
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ANNIHILATION; CRYSTAL DEFECTS; DOSE-RESPONSE RELATIONSHIPS; ELECTRON SPIN RESONANCE; INTERSTITIALS; ION IMPLANTATION; NITROGEN; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; SILICON; VACANCIES; X-RAY DIFFRACTION
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; INTERACTIONS; IONS; MAGNETIC RESONANCE; NONMETALS; PARTICLE INTERACTIONS; POINT DEFECTS; RADIATION EFFECTS; RESONANCE; SCATTERING; SEMIMETALS