Published 2003 | Version v1
Miscellaneous Open

High-vacuum secondary-ion mass spectrometer for studying of etching process and surface structure of semiconductors and dielectrics at irradiating by electrons, mono- and polyatomic ions

  • 1. Institute of Electronics AS RU, Tashkent (Uzbekistan)

Description

no abstract available

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Part of:
Proceedings of the conference 'Fundamental and applied problems of physics'

Additional details

Additional titles

Original title (Russian)
Сверхвысоковакуумный вторично-ионный масс-спектрометр для изучения травления и структуры поверхности полупроводников и диэлектриков при облучении электронами, моно и полиатомными ионами

Publishing Information

Publisher
Fiziko-tekhnicheskij institut, NPO 'Fizika-Solntse'
Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Proceedings of the conference 'Fundamental and applied problems of physics'
Imprint Pagination
494 p.
Journal Page Range
p. 381-383
Report number
INIS-UZ--133

Conference

Title
Conference on Fundamental and applied problems of physics consecrated to 60th anniversary of the Academy of Sciences of Uzbekistan and Physical-Technical Institute
Original Conference Title
Konferentsiya 'Fundamental'nye i prikladnye voprosy fiziki' posvyashchennaya 60--letiyu Akademii Nauk Respubliki Uzbekistan i Fiziko-Tekhnicheskogo Instituta
Dates
27-28 Nov 2003
Place
Tashkent (Uzbekistan)

Optional Information

Notes
1 ref., 1 fig., 1 tab.; This record replaces 39121192 Imprint:Trudy konferentsii 'Fundamental'nye i prikladnye voprosy fiziki'