Published November 2008 | Version v1
Journal article Metadata-only

Correlation between impurities in Fe-Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si

Creators

  • 1. Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, N.T., Hong Kong (China)
  • 2. Department of Physics, Chinese University of Hong Kong, Shatin, N.T., Hong Kong (China)

Description

Completely amorphous Fe-Si layers are formed by Fe implantation into Si substrate at a dosage of 5x1015 cm-2 using a metal vapor vacuum arc (MEVVA) ion source under 80 kV extraction voltage and cryogenic temperature. After thermal annealing, β-FeSi2 precipitates are formed in Si matrix. The influence of impurities in these amorphous Fe-Si layers on the photoluminescence (PL) from β-FeSi2 precipitates is investigated. PL is found to be significantly enhanced by optimizing the impurity concentration and annealing scheme. After 60 s of rapid thermal annealing (RTA) at 900 deg. C, β-FeSi2 precipitates in medium boron-doped Si substrate give the strongest PL intensity without boron out-diffusion from them

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2008.05.007

Additional details

Identifiers

DOI
10.1016/j.jlumin.2008.05.007;
PII
S0022-2313(08)00150-6;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
128
Journal Issue
11
Journal Page Range
p. 1841-1845
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40017034
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; BORON; CRYSTALLIZATION; DOPED MATERIALS; EXTRACTION; IMPURITIES; ION BEAMS; ION SOURCES; IRON SILICIDES; KEV RANGE 10-100; LAYERS; PHOTOLUMINESCENCE; PRECIPITATION; SYNTHESIS
Descriptors DEC
BEAMS; ELEMENTS; EMISSION; ENERGY RANGE; HEAT TREATMENTS; IRON COMPOUNDS; KEV RANGE; LUMINESCENCE; MATERIALS; PHASE TRANSFORMATIONS; PHOTON EMISSION; SEMIMETALS; SEPARATION PROCESSES; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.