Published 1989 | Version v1
Journal article Metadata-only

Fast neutron irradiation induced defects in high purity germanium

Creators

  • 1. Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires
  • 2. 2272000FR

Description

We have used Deep Level Transient Spectroscopy to study the defects introduced in high purity germanium following fast neutron (1.7 MeV) irradiation at room temperature. Their characteristics have been determined using this technique. A comparison with electron irradiation is helpful to discuss the origin of the defects observed. (author) 11 refs., 4 figs., 1 tab

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
1233-1237
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062217
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; ELECTRONS; FAST NEUTRONS; GERMANIUM; IRRADIATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SPECTROSCOPY
Descriptors DEC
BARYONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; LEPTONS; MATERIALS; METALS; NEUTRONS; NUCLEONS; SEMICONDUCTOR MATERIALS