Published December 30, 2016 | Version v1
Journal article

Structure and electronic properties of Zn-tetra-phenyl-porphyrin single- and multi-layers films grown on Fe(001)-p(1 × 1)O

Description

Highlights: • ZnTPP/Fe(001)-p(1 × 1)O is a prototypical system to investigate the porphyrin/thin metal oxide film interaction. • Oxygen layer plays a crucial role in decreasing the porphyrin-substrate interaction. • An ordered ZnTPP (5 × 5) reconstruction is found on the nominal 1 ML-thick film. • On Fe(001)-p(1 × 1)O the electronic properties of the ZnTPP film are preserved with respect to other substrates. - Abstract: The structure and the electronic properties of thin (1 molecular layer) and thick (20 molecular layers) Zn-tetra-phenyl-porphyrin (ZnTPP) films grown on a single metal oxide (MO) layer, namely Fe(001)-p(1 × 1)O, are shown and discussed. During the first stages of deposition, the ultra-thin MO layer reduces the molecule-substrate interaction enhancing the molecular diffusivity with the respect to other investigated substrates [namely, Si(111), Au(001) and oxygen-free Fe(001)]. On Fe(001)-p(1 × 1)O, ZnTPP molecules form an ordered and stable square-lattice array. The photoemission analysis of the valence bands reveals that all the characteristic features of the molecule are already visible in the 1 monolayer-thick sample spectrum. Similarly, the core level investigation suggests a weak molecule perturbation. The ZnTPP/Fe(001)-p(1 × 1)O interface represents a prototypical system to investigate the organic film adhesion on ultra-thin MO layers and the processes involved during the film growth.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2016.08.137

Additional details

Identifiers

DOI
10.1016/j.apsusc.2016.08.137;
PII
S0169-4332(16)31793-7;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
390
Journal Page Range
p. 856-862
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.