Published October 1984 | Version v1
Journal article Metadata-only

Behaviour of point defects under irradiation

Creators

  • 1. Moskovskij Inst. Ehlektronnoj Tekhniki (USSR)

Description

The relation between the amorphization processes in semiconductors under irradiation and the phenomenon of a loss instability in a system of radiation defects has been discussed. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff. Lett.
Journal Issue
v, 85(2
Series
Radiat. Eff. Lett.
ISSN
0142-2448

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
16020688
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AMORPHOUS STATE; ION IMPLANTATION; MATHEMATICAL MODELS; ORDER-DISORDER TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; STABILITY; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MATERIALS; PHASE TRANSFORMATIONS; POINT DEFECTS; RADIATION EFFECTS