Published September 1979
| Version v1
Journal article
Enhanced interdiffusion in the Al-Si system during Ar ion bombardment
- 1. Matsushita Electric Industrial Co. Ltd., Kadoma, Osaka (Japan)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Jpn. J. Appl. Phys.
- Journal Volume
- 18
- Journal Issue
- 9
- Series
- Jpn. J. Appl. Phys.
- Journal Page Range
- 1869-1870
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 11553496
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, No Abstract
- Descriptors DEI
- ALUMINIUM; ARGON IONS; ATOMIC IONS; DIFFUSION; DOSE RATES; EXPERIMENTAL DATA; GRAPHS; ION BEAMS; KEV RANGE 10-100; LOW TEMPERATURE; MEDIUM TEMPERATURE; QUANTITY RATIO; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; DATA; DATA FORMS; ELEMENTS; ENERGY RANGE; INFORMATION; IONS; KEV RANGE; METALS; NUMERICAL DATA; SEMIMETALS
Optional Information
- Notes
- Published in summary form only.