Published 2008
| Version v1
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Optical constants of low ion fluence implanted GaAs determined by differential reflectance and spectroscopic ellipsometry
- 1. Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)
- 2. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Files
40107965.pdf
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Additional details
Publishing Information
- Publisher
- Maria Curie-Sklodowska University, Lublin
- Imprint Place
- Lublin (Poland)
- Imprint Title
- Programme and abstracts of the seventh International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2008)
- Imprint Pagination
- 186 p.
- Journal Page Range
- p. 93
- Report number
- INIS-PL--2009-0011
Conference
- Title
- 7. International Conference on Ion Implantation and other Applications of Ions and Electrons
- Acronym
- ION 2008
- Dates
- 16-19 Jun 2008
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 40107965
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ARGON IONS; ELLIPSOMETRY; GALLIUM ARSENIDES; ION BEAMS; ION IMPLANTATION; SPECTRAL REFLECTANCE; SPECTROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; GALLIUM COMPOUNDS; IONS; MEASURING METHODS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES