Published September 2006
| Version v1
Journal article
Soft error evaluation in SRAM using α sources
Creators
- 1. Nuclear Engineering Department, Xi'an Jiaotong University (China)
- 2. Huawei Technologies Co. Ltd., Shenzhen (China)
Description
Soft errors in memories influence directly the reliability of products. To compare the ability of three different memories against soft errors by experiments of alpha particles irradiation, the numbers of soft errors are measured for three different SRAMs and the cross sections of single event upset (SEU) and failures in time (FIT) are calculated. According to the cross sections of SEU, the ability of A166M against soft errors is the best and then B166M, the last B200M. The average FIT of B166M is smaller than that of B200M, and that of A166M is the biggest among them. (authors)
Additional details
Publishing Information
- Journal Title
- Atomic Energy Science and Technology
- Journal Volume
- 40
- Journal Issue
- suppl
- Journal Page Range
- p. 192-195
- ISSN
- 1000-6931
Conference
- Title
- 4. Symposium on Nuclear Technology Application of Beijing Nuclear Society
- Dates
- 2006
- Place
- Beijing (China)
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 47094008
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA PARTICLES; ALPHA SOURCES; COMPARATIVE EVALUATIONS; CROSS SECTIONS; ERRORS; FAILURES; MEMORY DEVICES; PHYSICAL RADIATION EFFECTS; RELIABILITY
- Descriptors DEC
- CHARGED PARTICLES; EVALUATION; ION SOURCES; IONIZING RADIATIONS; PARTICLE SOURCES; RADIATION EFFECTS; RADIATION SOURCES; RADIATIONS
Optional Information
- Notes
- 2 figs., 2 tabs., 3 refs.