Multilayered ion-implanted BARITT diodes with improved efficiency

Based on a model suggested by the authors (Eknoyan, Yang and Sze. Solid State Electron.; 20:285 (1977)), diodes having the multilayered n+ipνn+ structure have been fabricated from silicon material using ion implantation techniques. Systematic descriptions of their fabrication and evaluation are presented. Microwave CW oscillations at C-band (approximately 7.5 Ghz) have been observed in some of these devices. The measured maximum power output was in the range of 40 mw and the efficiency was approximately 5%. The obtained efficiency is the best reported for any BARITT diode. This result indicates that the retarding field region in BARITT diodes may be used advantageously to provide a favorable phase delay between the injected current and the a.c. voltage and leads to improved efficiency BARITT oscillators. (author)