Published December 1988
| Version v1
Journal article
Low temperature proton induced upsets in nmos resistive load static ram
Creators
- 1. Vanderbilt Univ., Nashville, TN (USA)
- 2. Naval Research Lab., Washington, DC (USA)
Description
Proton induced upset measurements have been performed on some NMOS resistive load static RAMs for temperatures down to -1250C. Results show that the upset cross section strongly depends on temperature as well as incident beam flux. SPICE modelling for the critical charge versus temperature is not sufficient to explain the data. An explanation is provided that describes multiple sub-critical LET particles strikes within RAM cell integration times causing upsets
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 35
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1596-1601
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 25. annual conference on nuclear and space radiation effects.
- Dates
- 12-15 Jul 1988.
- Place
- Portland, OR (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20054785
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CROSS SECTIONS; INTEGRATED CIRCUITS; LET; LOW TEMPERATURE; MEMORY DEVICES; MOS TRANSISTORS; PROTON CHANNELING; SUBCRITICAL ASSEMBLIES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHANNELING; ELECTRONIC CIRCUITS; ENERGY TRANSFER; EXPERIMENTAL REACTORS; REACTORS; RESEARCH AND TEST REACTORS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-880730--.