Published December 1994
| Version v1
Journal article
SOI 68T020 heavy ion evaluation
- 1. Thomson-CSF Semiconductors Specifiques, Saint-Egreve (France)
- 2. Centre National d'Etudes Spatiales, Toulouse (France)
- 3. IPN, Orsay (France). Faculte des Sciences
Description
THOMSON-CSF Semiconducteurs Specifiques (TCS) and the CEA-LETI have developed a 0.8 μm SOI bulk compatible process (HSOI4CB) for space and battle field applications. The main motivation for this process is to allow the transfer of already existing bulk circuits onto SOI with reduced redesign effort and performances degradation. In this paper, SOI process (HSOI4CB) and the 68020 transfer are summarized, including the most significant characteristics of the resulting product (68T020), in terms of Single Event Upset (SEU) and Single Event Latch-up (SEL). For the same revision version, the 68T020 comparisons with bulk or epitaxial 6820 processes are given
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 41
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 2240-2243.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 31. annual international nuclear and space radiation effects conference.
- Dates
- 18-22 Jul 1994.
- Place
- Tucson, AZ (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26047814
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ERRORS; EXPERIMENTAL DATA; FABRICATION; FAILURES; MICROPROCESSORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; SPACE FLIGHT; WARFARE
- Descriptors DEC
- DATA; ELECTRONIC CIRCUITS; INFORMATION; MICROELECTRONIC CIRCUITS; NUMERICAL DATA; RADIATION EFFECTS; TESTING
Optional Information
- Secondary number(s)
- CONF-940726--.