Published September 1, 2008 | Version v1
Journal article

The effect of doping on X-ray response of TlBr crystals

  • 1. Radiation Monitoring Devices, Inc., Watertown, MA 02472-4699 (United States)

Description

The response of TlBr crystals (both undoped and doped with either In1+ or Pb2+) to X-ray radiation was studied. It was experimentally observed that the response of TlBr, TlBr:Pb2+ and TlBr:In1+ crystals to X-ray irradiation strongly depends on the polarity of irradiated contact. A simple model based on X-ray and charge carriers' interaction qualitatively explained the effect. The Tl1+ ions' X-ray-induced mobility of 6.6x10-14 cm2/V s and diffusion coefficient of 1.7x10-15 cm2/s at room temperature were estimated from X-ray-induced current-time measurements of TlBr and TlBr:Pb2+ crystals using suggested model

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2008.06.020

Additional details

Identifiers

DOI
10.1016/j.nima.2008.06.020;
PII
S0168-9002(08)00870-X;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
594
Journal Issue
2
Journal Page Range
p. 206-209
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.