Published July 2006
| Version v1
Journal article
Phase transitions of n- and p-CdTe at uniform compression
Creators
- 1. Inst. Fiziki Dagestanskogo Nauchnogo Tsentra RAN, Makhachkala (Russian Federation)
- 2. Inst. Kristallografii im. A.V. Shubnikova RAN, Moscow (Russian Federation)
Description
In CdTe single crystal specimens belonging to the electron and the hole type with various concentration of carriers one measured ρ specific electrical resistance at up to P≤7 GPa hydrostatic pressure within the room temperature range. On the basis of the experimental data and of the theory of behaviour of heterophase structures under high pressure values one determined the characteristic points and the parameters of phase transition when pressure increased and dropped
Abstract (Russian)
На монокристаллических образцах CdTe электронного и дырочного типа с различной концентрацией носителей измерено удельное электросопротивление ρ при гидростатическом давлении до P ≤ 7 ГПа в области комнатных температур. На основе собственных экспериментальных данных и теории поведения гетерофазных структур при высоких давлениях определены характеристические точки и параметры фазового перехода при подъеме и сбросе давления соответственноAdditional details
Additional titles
- Original title (Russian)
- Фазовые превращения в н- и п-CdTe при всестороннем сжатии
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 70
- Journal Issue
- 7
- Journal Page Range
- p. 1001-1003
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- OMA-2005; ODPO-2005
- Original Conference Title
- VIII Mezhdunarodnyj mezhdistsiplinarnyj simpozium Fazovye prevrashcheniya v tverdykh rastvorakh i splavakh OMA-2005
- Dates
- Sep 2005
- Place
- Rostov-na-Donu (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 39052359
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CARRIER DENSITY; CHARGE CARRIERS; COMPRESSION; CRYSTAL-PHASE TRANSFORMATIONS; ELECTRIC CONDUCTIVITY; HYSTERESIS; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHASE STUDIES; PRESSURE DEPENDENCE; PRESSURE RANGE GIGA PA
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; MATERIALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PRESSURE RANGE; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 19 refs., 3 figs., 1 tab.