Spectroscopic, dielectric properties and phase transition of Bis (diethylammonium) hexachlorido stannate(IV)
- 1. Laboratory of Material Engineering and Environment (LR11ES46), National School of Engineering, Box 1173, 3038, Sfax (Tunisia)
- 2. Physics Department, Faculty of Sciences and Arts-Tabarjal, Jouf University. P. O. Box 2014, Jouf, Skaka, 42421 (Saudi Arabia)
Description
The [C4H10NH2]2SnCl6 compound is characterized by using the X-ray powder analysis, thermogravimetric analysis, differential scanning calorimetry analysis, 13C and 119Sn (CP/MAS NMR) analysis, vibrational spectroscopy and complex impedance spectroscopic data. The results show that this compound exhibits a phase transition at 326 K which was characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, Raman spectroscopy and dielectric measurements. The most important changes are observed for four lines at 3207 cm−1, 3056 cm−1, 3000 cm−1 and 1538 cm−1 (at room temperature) issued from asymmetric and symmetric stretching vibrations of νs(NH2), νs(NH2), νas(NH2) and νδ(NH2) band, respectively. The assignment of the observed IR and Raman lines was performed by comparison with the homologous compounds. Dielectric data were analyzed using complex permittivity ε* and complex electrical modulus M* for the sample at various temperatures. The Z′ and Z" versus frequency plots are well fitted to an equivalent circuit model. The analysis of Nyquist plots are well fitted to an equivalent circuit consisting of series of combination of grains and grain boundary elements. The AC conductivity was studied using the following equation: . The conductivity follows the Arrhenius relation. Hopping frequency was determined and activation energy of hopping is almost equal to the activation energy of conduction. The temperature dependence of the power law exponent s and a.c conductivity σac is reasonably interpreted by the quantum mechanical tunneling (QMT) and the barrier hopping (CBH) model. The modulus plot can be characterized by full width at half height or in terms of a non-experiential decay function ϕ(t) = exp(−t/τ)β.
Additional details
Identifiers
- DOI
- 10.1016/j.physe.2019.113596;
- PII
- S1386947719302693;
Publishing Information
- Journal Title
- Physica E. Low-Dimensional Systems and Nanostructures (Print)
- Journal Volume
- 114
- Journal Page Range
- vp.
- ISSN
- 1386-9477
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55055236
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIELECTRIC MATERIALS; GRAIN BOUNDARIES; PERMITTIVITY; RAMAN SPECTROSCOPY; THERMAL GRAVIMETRIC ANALYSIS; TIN 119; X-RAY DIFFRACTION
- Descriptors DEC
- CHEMICAL ANALYSIS; COHERENT SCATTERING; DAYS LIVING RADIOISOTOPES; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; EVEN-ODD NUCLEI; GRAVIMETRIC ANALYSIS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; LASER SPECTROSCOPY; MATERIALS; MICROSTRUCTURE; NUCLEI; PHYSICAL PROPERTIES; QUANTITATIVE CHEMICAL ANALYSIS; RADIOISOTOPES; SCATTERING; SPECTROSCOPY; STABLE ISOTOPES; THERMAL ANALYSIS; TIN ISOTOPES
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.