Surface anisotropy characterization and microstructure of Cu-W thin films at different annealing temperatures
Creators
Description
Cu-W films were deposited on Al2O3 substrates by magnetron sputtering and then annealed in Ar gas at different temperatures for an hour. The evolution of surface morphology of the films during deposition and annealing was investigated by mathematical techniques. A strategy integrating discrete wavelet transform and fractal geometry concepts was developed for analyzing the anisotropy of surface structure of Cu-W thin films. The results indicated that the agglomeration of Cu-W thin films occurs primarily during annealing process. Based on the observation of positive correlation between the surface anisotropy and W-like phase transition, the relationship between the evolution of surface morphology of Cu-W thin films and the transition of phase structure was constructed. It was concluded that the changes of phase structures could have a significant impact on the anisotropy behavior of surface structure of Cu-W thin films
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2004.01.146;
- PII
- S0921452604001632;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 349
- Journal Issue
- 1-4
- Journal Page Range
- p. 10-18
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36051556
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM OXIDES; ANISOTROPY; ANNEALING; COPPER; CORRELATIONS; DEPOSITION; EVOLUTION; GEOMETRY; MAGNETRONS; MICROSTRUCTURE; MORPHOLOGY; PHASE TRANSFORMATIONS; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; TUNGSTEN
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; MATHEMATICS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METALS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.