Published June 1, 1982
| Version v1
Journal article
1.22-μm HgCdTe/CdTe avalanche photodiodes
Creators
- 1. Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, California 91360
Description
A planar HgCdTe/CdTe avalanche photodiode with peak responsivity at 1.22 μm and cutoff at 1.25 μm has been fabricated successfully by liquid phase epitaxy (LPE). Avalanche gains of higher than 15 have been obtained with 1.06-μm Nd:yttrium aluminum garnet (YAG) laser illumination. A reverse breakdown voltage of 80 V and a leakage current density of 1 x 10-4 A/cm2 at 40 V were measured. The peak quantum efficiency at 1.22 μm is 72% without any antireflection coating
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 40
- Journal Issue
- 11
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 965-967
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 13696421
- Subject category
- S42: ENGINEERING;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ALUMINIUM OXIDES; BREAKDOWN; CADMIUM TELLURIDES; CURRENT DENSITY; ELECTRIC CURRENTS; EPITAXY; EXPERIMENTAL DATA; FABRICATION; FERRITE GARNETS; FREQUENCY RANGE; GAIN; LIQUIDS; MERCURY TELLURIDES; NEODYMIUM LASERS; PHOTODIODES; QUANTUM EFFICIENCY; RESPONSE FUNCTIONS; YTTRIUM COMPOUNDS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; AMPLIFIERS; CADMIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; DATA; EFFICIENCY; FLUIDS; FUNCTIONS; INFORMATION; LASERS; MERCURY COMPOUNDS; MINERALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SOLID STATE LASERS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS