Published July 1992 | Version v1
Journal article Metadata-only

Boron gettering from p-Si volume at ion bombardment

Creators

  • 1. AN Kazakhskoj SSR, Alma-Ata (Kazakhstan). Inst. Fiziki Vysokikh Ehnergij

Description

Experimental investigations into the migration of B in Si after irradiation with P+, O+, Fw+ ions with E=5 keV-1.2 MeV and Φ=1014-1016 cm-2 are conducted. It is shown that dunning irradiation B migrates to the surface from Si volume

Additional details

Additional titles

Original title (Russian)
Геттерирование атомов бора из обьема п-Си при ионном облучении

Publishing Information

Journal Title
Izvestiya Akademii Nauk - Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
Journal Volume
56
Journal Issue
7
Journal Page Range
p. 27-31.
ISSN
0367-6765

Conference

Title
10. All-union conference on Ion interaction with surface.
Original Conference Title
Materialy 10. Vsesoyuznoj konferentsii ''Vzaimodejstvie ionov s poverkhnost'yu''
Dates
25 Sep 1991.
Place
Moscow (Russian Federation).

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
25002209
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BORON; GETTERING; ION BEAMS; ION EMISSION; ION IMPLANTATION; IRON IONS; KEV RANGE; MASS SPECTRA; MASS TRANSFER; OXYGEN IONS; P-TYPE CONDUCTORS; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SECONDARY EMISSION; SILICON
Descriptors DEC
BEAMS; CHARGED PARTICLES; ELEMENTS; EMISSION; ENERGY RANGE; IONS; MATERIALS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA