Published 1989
| Version v1
Miscellaneous
Doping of n-GaAs with radiation-induced defects under electron and proton irradiation
Creators
Description
Short note. 1 ref
Additional details
Additional titles
- Original title (Russian)
- Легирование н-GaAs радиационными дефектами при электронном и протонном облучении
Publishing Information
- Imprint Title
- Summaries of reports of 19. All-union conference on physics of charged particles interaction with crystals
- Imprint Pagination
- 192 p.
- Journal Page Range
- p. 175.
- Report number
- INIS-SU--144/A
Conference
- Title
- 19. All-union conference on physics of charged particles interaction with crystals.
- Dates
- 29-31 May 1989.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 21021305
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHARGE CARRIERS; ELECTRON BEAMS; GALLIUM ARSENIDES; HIGH TEMPERATURE; KEV RANGE 100-1000; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ENERGY RANGE; GALLIUM COMPOUNDS; KEV RANGE; LEPTON BEAMS; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Imprint:Tezisy dokladov 19. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.