Ion-laser method for fabrication of position-sensetive detectors

Investigated is the technology of fabrication of the discrete position-sensitive radiation detectors (PSD) cmprising formation of p-i-n structure by means of compensation of the sensitive region by lithium, ion implantation of boron, arsenic or phosphorus with the following annealing of radiation defects by a strong pulse laser coherent radiation. The optimal regime of laser annealing during the fabrication of the discrete PSD were: laser power-0.05-0.5 J/cm, pulse duration of the laser radiation-15-22 ns. It is concluded that combination of lithium-drift technology with ion-laser technology permits to develop a new type of the discrete PSD combining high position and energy resolution with thin inlet window and extended sensitive region