Published August 11, 2008 | Version v1
Journal article

Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

  • 1. Department of Physics, Atatuerk University, 25240 Erzurum (Turkey)
  • 2. Radiation Oncology Department, Faculty of Medicine, Atatuerk University, 25240 Erzurum (Turkey)

Description

In this study, the effects of high-energy electron irradiation on the electrical characteristics of a Rhodamine-101(Rh101)/p-Si Schottky structure were investigated. Some contact parameters such as barrier height, ideality factor and series resistance were calculated from the current-voltage (I-V) characteristics. It was seen that these three parameters were increased by the electron irradiation. After the electron irradiation, it was also seen that the carrier concentration, the reverse bias current and the capacitance of the device decreased

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2008.05.043

Additional details

Identifiers

DOI
10.1016/j.nima.2008.05.043;
PII
S0168-9002(08)00785-7;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
593
Journal Issue
3
Journal Page Range
p. 544-549
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.