Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling

<111>-GaAs, Ge and Si wafers were implanted with 60 keV H+-ions at room temperature (Ni=1x1016-8x1016 cm-2). Weakly and strongly damaged layers were produced in the different semiconductor materials. Energy and temperature dependent RBS-channeling measurements showed the existence of uncorrelated displaced lattice atoms (point defects or point defect complexes) characterized by different displacement distances ra for GaAs and randomly distributed distances (or large distances) for Ge and Si. The obtained different defect distributions were compared and discussed for the three materials. (orig.)