Published February 25, 2008 | Version v1
Journal article

First-principles study of native defects in rutile TiO2

Creators

  • 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

Description

Native point defects in the rutile TiO2 are studied via first-principles pseudopotential calculations. Except for the two antisite defects, all the native point defects have low formation energies. Under the Ti-rich growth condition, high concentrations of titanium interstitials and oxygen vacancies would form spontaneously in p-type samples; whereas high concentrations of titanium vacancies would form spontaneously in n-type samples regardless of the oxygen partial pressure

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2007.10.011

Additional details

Identifiers

DOI
10.1016/j.physleta.2007.10.011;
PII
S0375-9601(07)01438-7;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
372
Journal Issue
9
Journal Page Range
p. 1527-1530
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.