Nanoarchitectonics of binary semiconductor Sb-Y for the application of phase-change memory device

This work systematically investigates the improvement in phase change properties and crystallization mechanism of Sb films after Y doping. Compared with the pure Sb thin films, Sb${}_{51}$Y${}_{49}$ has a higher crystallizing temperature (203 ℃) and longer failure time (766 s), indicating that Y doping can enhance the thermal stability of the material in the amorphous state effectively. Y exists in an amorphous state and has an inhibitory effect on grain growth, resulting in smaller grain sizes in Y-doped Sb films. The crystallization mechanism was investigated using the Johnson-Mehl-Avrami model, and the crystallization mechanism of the Sb films before and after Y-doping is unchanged and always dominated by growth, a property that is favorable for achieving fast phase transitions. The phase change cells based on Sb${}_{51}$Y${}_{49}$ films exhibit a lower energy consumption (3.5 × 10${}^{-11}$ J) than the conventional Ge${}_2$Sb${}_2$Te${}_5$ material. The findings demonstrate the potential of Y-doped Sb as a phase change material with excellent crystallization rate and energy consumption performance.