To elucidation of positive muon diffusion mechanism in bismuth

Suggested is the method of identication of mechanism of positive muons diffusion in crystalline bismuth, in which anomaly of temperature dependence of muons spin relaxation time has been observed. Two possible mechanisms are discussed: incoherent activation type transitions and coherent quantum muon transitions characterized by their essentially different behaviour whith the temperature change. It is suggested that the anomaly depends on the effect of traps impurities and defects in a crystal specimen which are capable of capturing the muon and thus excluding its further diffusion motion. On the basis of a simple stochastic model the functions of transverse spin relaxation of p(t) muons in a strong magnetic field for different diffusion rates of muons and their captures in traps are derived. It is suggested the p(t) dependences obtained to compare with the observed in the experimental time dependences of muon polarization with the purpose of chosing one of the two diffusion mechanisms