Numerical study of dependence of thermally stimulated currents in disordered solids at step heating regime on initial trap occupancy

In the present paper numerical investigation of thermally stimulated currents (TSCs) in disordered solids, measured at step heating regime, is performed. The utilized energy distribution of trapping states is the superposition of exponential and Gaussian distributions. The monomolecular carrier recombination regime is assumed. The resulting set of stiff differential equations governing TSCs is solved with the use of Gear's procedure. The calculations are made for several carrier generation and recombination rates. The TSC curves are next analyzed by the methods developed in previous papers and the calculated trap distributions are compared with the input distributions. It is concluded that the methods have satisfactory accuracy solely in the cases of week carrier retrapping or small trap occupancy.