Pattern formation during the oscillatory photoelectrodissolution of n-type silicon: turbulence, clusters and chimeras
- 1. Nonequilibrium Chemical Physics, Physik-Department, Technische Universität München, D-85747 Garching (Germany)
Description
We report and classify the rich variety of patterns forming spontaneously in the oxide layer during the oscillatory photoelectrodissolution of n-type doped silicon electrodes under limited illumination. Remarkably, these patterns are often comprised of several dynamical states coexisting on the electrode, such as subharmonic phase clusters and spatio-temporal chaos, and include so-called 'chimera states'. The experiments suggest that the subharmonic phase clusters emerge from a period doubling bifurcation that, upon further parameter changes, evolves into classical phase clusters. Experimentally the occurrence of the patterns is controlled via two coupling mechanisms: a linear global coupling by an external resistor and a nonlinear coupling imposed on the system by the limitation of the illumination. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/16/6/063024Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 16
- Journal Issue
- 6
- Journal Page Range
- [25 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46064195
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BIFURCATION; COUPLING; DOPED MATERIALS; ELECTRODES; ILLUMINANCE; LAYERS; NONLINEAR PROBLEMS; OXIDES; RESISTORS; SILICON; TURBULENCE
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MATERIALS; OXYGEN COMPOUNDS; SEMIMETALS