Published February 1986
| Version v1
Journal article
On the radiation-induced defects in GaAs produced by medium-energy proton irradiation
Creators
- 1. Moskovskij Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel'skij Inst. Yadernoj Fiziki
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- О радиационных дефектах, вводимых в GaAs облучением протонами средних энергий
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 20
- Journal Issue
- 2
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 388
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17063600
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CARRIER MOBILITY; CHARGE DENSITY; ENERGY DEPENDENCE; FILMS; FRENKEL DEFECTS; GALLIUM ARSENIDES; HALL EFFECT; MEV RANGE 01-10; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; TEMPERATURE DEPENDENCE; THICKNESS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; ENERGY RANGE; GALLIUM COMPOUNDS; MATERIALS; MEV RANGE; MOBILITY; NUCLEON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; VACANCIES
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).