Mechanism of enhancement of controllable secondary-electron emission from fast single electrons

For porous KCl films (density approximately 2 percent, thickness 50-400 μm), the controllable secondary electron emission (CSEE) from fast single electrons with energies of 0.7-2 MeV was studied. An electric field E of approximately 104-105 V/cm was set up inside the porous films and the emission curves anti sigma = f(E) and the energy spectra of the secondary electrons were measured. The mean emission coefficient anti sigma increases with increasing E, reaching a value of anti sigma approximately equal to 230. Internal enhancement of CSEE under the action of the E field is explained by a process similar to the Townsend semi-self-maintained discharge in gases. The mean free path L/sub e/ of the secondary electrons estimated on the basis of this mechanism of CSEE enhancement is in good agreement with the L/sub e/ value obtained independently from the energy spectra of the secondary electrons. The report examines the effect of the first critical potential U/sub il/ and of the electron affinity of the dielectric α on the formation of CSEE from a porous dielectric film. The possibility of using such films in particle detectors is discussed