Published June 1985
| Version v1
Journal article
To the problem of radiation resistance of silicon magnetosensitive transistors
Creators
- 1. Odesskij Gosudarstvennyj Univ. (Ukrainian SSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- К вопросу о радиационной стойкости кремниевых магниточувствительных транзисторов
Publishing Information
- Journal Title
- Zh. Tekh. Fiz.
- Journal Volume
- 55
- Journal Issue
- 6
- Series
- Zh. Tekh. Fiz.
- Journal Page Range
- 1247-1248
- ISSN
- 0044-4642
- CODEN
- ZTEFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17037048
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ELECTRONS; GAMMA RADIATION; MAGNETIC FIELDS; MIS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SENSITIVITY
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; IONIZING RADIATIONS; LEPTONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Technical Physics (USA).