Published May 1974
| Version v1
Journal article
On the distribution of recombination centers arising due to the middle energy ion bombardment of Si
Creators
- 1. Gor'kovskij Gosudarstvennyj Univ. (USSR). Issledovatel'skij Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- О распределении рекомбинационных центров, возникающих при бомбардировке кремния ионами средних энергий
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 8
- Journal Issue
- 5
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 936-939
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5140073
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ARGON IONS; COLOR CENTERS; COMPARATIVE EVALUATIONS; ION IMPLANTATION; KEV RANGE 10-100; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RECOMBINATION; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- For English translation see the journal Sov. Phys.-Semicond.