Published September 1988
| Version v1
Journal article
Behavior of boron and phosphorus impurities in silicon during irradiation with neutrons and subsequent annealing
Description
The infrared absorption method in combination with electrophysical measurements was used to investigate the accumulation of radiation defects in p-type Si:B and n-type Si:P and the behavior of the B and P impurities during irradiation with neutrons and subsequent annealing. It was found that phosphorus in its ground state occupied a regular site during irradiation and subsequent annealing up to ∼200 degree C, whereas about 95% of the boron impurity was in defect complexes after irradiation
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 22
- Journal Issue
- 9
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 984-988
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21070799
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ANNEALING; BORON; DATA PROCESSING; IMPURITIES; MEASURING INSTRUMENTS; MEASURING METHODS; NEUTRONS; PHOSPHORUS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; USSR
- Descriptors DEC
- BARYONS; DEVELOPED COUNTRIES; ELEMENTARY PARTICLES; ELEMENTS; EUROPE; FERMIONS; HADRONS; HEAT TREATMENTS; MATERIALS; NONMETALS; NUCLEONS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (US SR).