Published 1986
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Theoretical studies of defects in binary and ternary oxides
Description
This paper presents some preliminary results of electronic structure of substitutional defects and vacancy in binary and ternary cubic zirconium oxides obtained by the embedded molecular-cluster model calculation. The importance of electronic charge redistribution in the solids where the defect is introduced into the perfect lattice is highlighted and the effect of electron polarization of the surrounding ions of the defect discussed
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01; 1 as DE87004704.Files
18064463.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 7 p.
- Report number
- CONF-861207--62
Conference
- Title
- Materials Research Society fall meeting.
- Dates
- 1-5 Dec 1986.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18064463
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE TRANSPORT; CRYSTAL DEFECTS; CUBIC LATTICES; ELECTRONIC STRUCTURE; ENERGY GAP; SOLID CLUSTERS; VACANCIES; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS
Optional Information
- Notes
- Portions of this document are illegible in microfiche products.