Published August 7, 2008 | Version v1
Journal article

Enhanced photovoltage in perovskite-type artificial superlattices on Si substrates

  • 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  • 2. Department of Mathematics and Physics, China University of Petroleum, Beijing 102249 (China)

Description

We have fabricated a three-component perovskite-type superlattice (SL) consisting of La0.9Sr0.1MnO3, SrTiO3 and LaAlO3 with atomic scale control by laser molecular beam epitaxy on Si substrates. When a He-Ne laser irradiated the superlattice by side illumination, a stable photovoltage was produced and the responsivity reached 46.7 mV mW-1 which is six times higher than that of a similarly grown La0.9Sr0.1MnO3 single layer on Si substrates. This work demonstrates the potential of the present SL in photo-detectors operating at room temperature

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/41/15/155414

Additional details

Identifiers

DOI
10.1088/0022-3727/41/15/155414;
PII
S0022-3727(08)79099-5;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
41
Journal Issue
15
Journal Page Range
[4 p.]
ISSN
0022-3727
CODEN
JPAPBE