Published November 4, 2011
| Version v1
Journal article
Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study
- 1. Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, PO Box 49, H-1525, Budapest (Hungary)
- 2. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
- 3. Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, H-1111 Budapest (Hungary)
Description
Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 107
- Journal Issue
- 19
- Journal Page Range
- p. 195501-195501.5
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43083859
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ASYMMETRY; DOPED MATERIALS; ELECTRON SPIN RESONANCE; NIOBIUM; SILICON CARBIDES; VACANCIES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; MAGNETIC RESONANCE; MATERIALS; METALS; POINT DEFECTS; REFRACTORY METALS; RESONANCE; SILICON COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2011 American Institute of Physics