Evidence of Strong Orbital-Selective Spin-Orbital-Phonon Coupling in
Creators
- 1. Department of Mechanical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
- 2. Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, Maharashtra 400076, India
- 3. Free Electron Laser Utilization Laboratory, Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013, India
- 4. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
- 5. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, Madhya Pradesh 452001, India
- 6. Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085, India
- 7. Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
Description
Coupling of orbital degree of freedom with a spin exchange, i.e., Kugel-Khomskii-type interaction (KK), governs a host of material properties, including colossal magnetoresistance, enhanced magnetoelectric response, and photoinduced high-temperature magnetism. In general, KK-type interactions lead to deviation in experimental observables of coupled Hamiltonian near or below the magnetic transition. Using diffraction and spectroscopy experiments, here we report anomalous changes in lattice parameters, electronic states, spin dynamics, and phonons at four times the Néel transition temperature () in . The temperature is significantly higher than other -orbital compounds such as manganites and vanadates, where effects are limited to near or below . The experimental observations are rationalized using first-principles and Green's function-based phonon and spin simulations that show unprecedentedly strong KK-type interactions via a superexchange process and an orbital-selective spin-phonon coupling coefficient at least double the magnitude previously reported for strongly coupled spin-phonon systems. Our results present an opportunity to explore the effect of KK-type interactions and spin-phonon coupling well above and possibly bring various properties closer to application, for example, strong room-temperature magnetoelectric coupling.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevLett.132.026701;
- Crossref Funder ID
- 10.13039/501100011627; 10.13039/501100005808; 10.13039/501100001843; 10.13039/501100010426; 10.13039/501100004541; 10.13039/501100000271; 10.13039/501100001409; 10.13039/501100005116;
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 132
- Journal Issue
- 2
- Journal Page Range
- 7 pgs.
- ISSN
- 0031-9007
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEGREES OF FREEDOM; DIFFRACTION; EXCHANGE INTERACTIONS; GREEN FUNCTION; HAMILTONIANS; L-S COUPLING; LATTICE PARAMETERS; MAGNETISM; MAGNETORESISTANCE; NEEL TEMPERATURE; PHONONS; SIMULATION; SPECTROSCOPY; SPIN; SPIN EXCHANGE; TRANSITION TEMPERATURE
- Descriptors DEC
- ANGULAR MOMENTUM; COHERENT SCATTERING; COUPLING; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FUNCTIONS; INTERACTIONS; INTERMEDIATE COUPLING; MATHEMATICAL OPERATORS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; QUANTUM OPERATORS; QUASI PARTICLES; SCATTERING; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE
Optional Information
- Copyright
- © 2024 American Physical Society
- Contract/Grant/Project number
- CRG/2022/001317; CRS/2021-22/03/550; MoE/STARS-1/345; RB2190106; SR/NM/Z-07/2015
- Notes
- Contact Email: roy.aditya.aditya@iitb.ac.in; Contact Email: dipanshu@iitb.ac.in; Record automatically processed
- Funding organization
- Industrial Research and Consultancy Centre; Indian Institute of Technology Bombay; Science and Engineering Research Board; UGC-DAE Consortium for Scientific Research, University Grants Commission; Ministry of Education, India; Science and Technology Facilities Council; Department of Science and Technology, Ministry of Science and Technology, India; Jawaharlal Nehru Centre for Advanced Scientific Research