Some peculiarities of recombination processes in InP(Fe) semi-insulating

Photoconductivity, thermally stimulated conductivity and electric absorption of InP(Fe) have been investigated. Spectrum of energy levels in the forbidden zone has been studied and significance of these levels in the recombination has been elucidated. It is shown that the additional illumination of a variable spectral composition causes the stimulation or quenching of photocurrent when exciting electrons from centres of the slow and fast recombinations, accordingly. Peculiarities testifying to the presence of the complex centers with the Coulomb interaction between components have been discovered in the thermally stimulated conductivity. One of them - the low-field ionization of deep impurity levels in the recombination process - is related to the action of hot electrons produced in the Auger-capture process with the participation of localized carriers of a charge accumulated under the effect of the field in the side valleys of the conductivity zone