Published September 2008
| Version v1
Journal article
Experimental study on response of GaAs photoconductor as radiation detector
- 1. Northwest Inst. of Nuclear Technology, Xi'an (China)
- 2. China Inst. of Atomic Energy, Beijing (China)
Description
The response of ultra fast photoconduction detector made of SI-LEC GaAs crystal was studied experimentally. The response time to picoseconds pulse laser and sensitivity to 532 nm direct current laser were obtained for GaAs detector. The experimental results show that the response time of the GaAs detector is about 100 ps and is independent of the bias voltage. However, it is dependent on the conditions of measurement system. The method of neutron irradiation and techniques change can improve the response time of the detector. The relationship between the sensitivity and the bias voltage is linear. (authors)
Additional details
Publishing Information
- Journal Title
- Atomic Energy Science and Technology
- Journal Volume
- 42
- Journal Issue
- 9
- Journal Page Range
- p. 837-841
- ISSN
- 1000-6931
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 40076909
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CRYSTALS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; IRRADIATION; LASER RADIATION; NEUTRONS; PHOTOCONDUCTORS; PHYSICAL RADIATION EFFECTS; PULSE RISE TIME; RESPONSE FUNCTIONS; SEMICONDUCTOR DETECTORS; SENSITIVITY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; FUNCTIONS; GALLIUM COMPOUNDS; HADRONS; MEASURING INSTRUMENTS; NUCLEONS; PNICTIDES; RADIATION DETECTORS; RADIATION EFFECTS; RADIATIONS; TIMING PROPERTIES
Optional Information
- Notes
- 11 figs., 9 refs.