Published January 2012 | Version v1
Journal article

Temperature dependence of electron transport on a bound-to-continuum terahertz quantum cascade laser

  • 1. Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

Description

We investigate the temperature effects on electron transport in a bound-to-continuum terahertz quantum cascade laser using Monte Carlo simulation which includes electron–electron and electron–phonon scattering. The effects of carrier transport paths and mechanisms, especially for those related to laser levels, on the device's temperature performance are evaluated. The simulation shows that the parasitic leakage of carriers from the upper laser level and the thermal backfilling to the lower laser level is the main limiting factor for high-temperature operation. The calculations are in good agreement with experimental results

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/27/1/015002

Additional details

Identifiers

DOI
10.1088/0268-1242/27/1/015002;
PII
S0268-1242(12)06889-1;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
27
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45014366
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPUTERIZED SIMULATION; ELECTRONS; LASERS; MONTE CARLO METHOD; SCATTERING; TEMPERATURE DEPENDENCE
Descriptors DEC
CALCULATION METHODS; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; SIMULATION