Characterisation of AlGaN MSM by Light Beam Induced Current technique
Creators
- 1. The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw (Poland)
Description
The influence of the grain structure on the performance of AlGaN MSM detector structures was examined by Light Beam Induced Current (LBIC) technique. LBIC is a mapping technique in which the generated photocurrent is measured for each position of the scanning light beam. Estimated values for the effective carrier collection regions between contact electrodes in AlGaN MSM structures are hundreds of nanometers. A non-uniformity of the carrier distribution was observed. Regions, where the measured signal was one order of magnitude larger than the average signal level, were also observed. LBIC method was applied for investigation of layer quality and for optimisation of MSM detectors. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.200564147Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Conferences
- Journal Volume
- 3
- Journal Issue
- 3
- Journal Page Range
- p. 602-606
- ISSN
- 1610-1634
Conference
- Title
- 32. International symposium on compound semiconductors (ISCS-2005)
- Dates
- 18-22 Sep 2005
- Place
- Rust (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 37032398
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM NITRIDES; CARRIER DENSITY; CHARGE COLLECTION; ELECTRODES; GALLIUM NITRIDES; GRAIN BOUNDARIES; HETEROJUNCTIONS; JUNCTION DETECTORS; LAYERS; PHOTOCONDUCTIVITY; PULSES; SCANNING ELECTRON MICROSCOPY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; MICROSCOPY; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- With 5 figs., 7 refs.. SICI: 1610-1634(200603)3:3<602::AID-PSSC200564147>3.0.TX;2-O