DLTS study of the γ-irradiation effect on the properties of n-type Si < Mn >

Results of investigation into the effect of 60Co γ-quantum irradiation on n-Si < Mn > properties by means of DLTS are described. It is obtaned from measurements of dose dependences of deep level (DL) concentration Nr in n-Si- < Mn > that Nr variations in the investigated range of radiation doses have non-monotonous character and they depend on initial DL concentration. Gamma-radiation is found to introduce a new level associated with radiation defects (Esub(c)-0.17 eV-A-centre). Manganese implantation into silicon is shown to result in deceleration of radiation defect formation: rate of the A-centre intoduction into n-Si < Mn > is essentially lower than in control samples